Enhanced Electrical Transport in Carbon Nanotube Thin Films through Defect Modulation

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• 作者：Jamie E. Rossi ; Cory D. Cress ; Sheila M. Goodman ; Nathanael D. Cox ; Ivan Puchades ; Andrew R. Bucossi ; Andrew Merrill ; Brian J. Landi
• 刊名：Journal of Physical Chemistry C
• 出版年：2016
• 出版时间：July 21, 2016
• 年：2016
• 卷：120
• 期：28
• 页码：15488-15495
• 全文大小：425K
• 年卷期：0
• ISSN：1932-7455

文摘

The electrical properties of single-wall carbon nanotube (SWCNT) thin films were enhanced through defect introduction and subsequent thermal annealing in forming gas. The defect density in the SWCNT thin films was modulated using ion irradiation with 150 keV ¹¹B⁺ over the fluence range of 1 × 10¹³ and 1 × 10¹⁵ ions/cm². Following thermal annealing at 1000 °C in forming gas, partial recovery in the optical absorbance and Raman spectra is observed at all fluences studied, with 100% recovery observed in samples exposed to a fluence less than 5 × 10¹³ ions/cm². By comparison, annealing yields near complete recovery of the electrical conductivity at all fluences studied (up to 1 × 10¹⁵ ions/cm²). Remarkably, radiation exposure up to a fluence of 1 × 10¹⁴ ions/cm² followed by thermal annealing improves the electrical conductivity, exceeding the as-purified value by as much as ∼4×. These results implicate the origin of the enhanced SWCNT network conductance with the formation of transport-enhancing inter-SWCNT bridges that decrease inter-SWCNT junction resistance, thereby enhancing the overall network connectivity.