Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy

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• 作者：Leith Samad ; Sage M. Bladow ; Qi Ding ; Junqiao Zhuo ; Robert M. Jacobberger ; Michael S. Arnold ; Song Jin
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：July 26, 2016
• 年：2016
• 卷：10
• 期：7
• 页码：7039-7046
• 全文大小：443K
• 年卷期：0
• ISSN：1936-086X

文摘

The fascinating semiconducting and optical properties of monolayer and few-layer transition metal dichalcogenides, as exemplified by MoS<sub>2sub>, have made them promising candidates for optoelectronic applications. Controllable growth of heterostructures based on these layered materials is critical for their successful device applications. Here, we report a direct low temperature chemical vapor deposition (CVD) synthesis of MoS<sub>2sub> monolayer/multilayer vertical heterostructures with layer-controlled growth on a variety of layered materials (SnS<sub>2sub>, TaS<sub>2sub>, and graphene) via van der Waals epitaxy. Through precise control of the partial pressures of the MoCl<sub>5sub> and elemental sulfur precursors, reaction temperatures, and careful tracking of the ambient humidity, we have successfully and reproducibly grown MoS<sub>2sub> vertical heterostructures from 1 to 6 layers over a large area. The monolayer MoS<sub>2sub> heterostructure was verified using cross-sectional high resolution transmission electron microscopy (HRTEM) while Raman and photoluminescence spectroscopy confirmed the layer-controlled MoS<sub>2sub> growth and heterostructure electronic interactions. Raman, photoluminescence, and energy dispersive X-ray spectroscopy (EDS) mappings verified the uniform coverage of the MoS<sub>2sub> layers. This reaction provides an ideal method for the scalable layer-controlled growth of transition metal dichalcogenide heterostructures via van der Waals epitaxy for a variety of optoelectronic applications.