Electron-Beam-Induced Deposition as a Technique for Analysis of Precursor Molecule Diffusion Barriers and Prefactors

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• 作者：Jared Cullen ; Charlene J. Lobo ; Michael J. Ford ; Milos Toth
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：September 30, 2015
• 年：2015
• 卷：7
• 期：38
• 页码：21408-21415
• 全文大小：453K
• ISSN：1944-8252

文摘

Electron-beam-induced deposition (EBID) is a direct-write chemical vapor deposition technique in which an electron beam is used for precursor dissociation. Here we show that Arrhenius analysis of the deposition rates of nanostructures grown by EBID can be used to deduce the diffusion energies and corresponding preexponential factors of EBID precursor molecules. We explain the limitations of this approach, define growth conditions needed to minimize errors, and explain why the errors increase systematically as EBID parameters diverge from ideal growth conditions. Under suitable deposition conditions, EBID can be used as a localized technique for analysis of adsorption barriers and prefactors.