Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ

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• 作者：Mark T. Edmonds ; Jack Hellerstedt ; Kane M. O’Donnell ; Anton Tadich ; Michael S. Fuhrer
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：June 29, 2016
• 年：2016
• 卷：8
• 期：25
• 页码：16412-16418
• 全文大小：390K
• 年卷期：0
• ISSN：1944-8252

文摘

We perform low-temperature transport and high-resolution photoelectron spectroscopy on 20 nm thin film topological Dirac semimetal Na<sub>3sub>Bi grown by molecular beam epitaxy. We demonstrate efficient electron depletion ∼10<sup>13sup> cm<sup>–2sup> of Na<sub>3sub>Bi via vacuum deposition of molecular F4-TCNQ without degrading the sample mobility. For samples with low as-grown n-type doping (1 × 10<sup>12sup> cm<sup>–2sup>), F4-TCNQ doping can achieve charge neutrality and even a net p-type doping. Photoelectron spectroscopy and density functional theory are utilized to investigate the behavior of F4-TCNQ on the Na<sub>3sub>Bi surface.