Charge–Exciton Interaction Rate in Organic Field-Effect Transistors by Means of Transient Photoluminescence Electromodulated Spectroscopy
详细信息    查看全文
文摘
Organic light-emitting transistors (OLETs) offer a huge potential for the design of highly integrated multifunctional optoelectronic systems and of intense nanoscale light sources, such as the long-searched-for electrically pumped organic laser. In order to fulfill these promises, the efficiency and brightness of the current state-of-the-art devices have to be increased significantly. The dominating quenching process limiting the external quantum efficiency in OLETs is charge–exciton interaction. A comprehensive understanding of this quenching process is therefore of paramount importance. The present article reports a systematic investigation of charge–exciton interaction in organic transistors employing time-resolved photoluminescence electro-modulation (PLEM) spectroscopy on the picosecond time scale. The results show that the injected charges reduce the exciton radiative recombination in two ways: (i) charges may prevent the generation of excitons and (ii) charges activate a further nonradiative channel for the exciton decay. Moreover, the transient PLEM measurements clearly reveal that not only trapped charges, as already reported in literature, but rather the entire injected charge density contributes to the quenching of the exciton population.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700