Effect of the Ligand Structure on Chemical Vapor Deposition of WNxCy Thin Films from Tungsten Nitrido Complexes of the Type WN(NR2)3

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• 作者：Arijit Koley ; Christopher T. O鈥橠onohue ; Michelle M. Nolan ; K. Randall McClain ; Richard O. Bonsu ; Roman Y. Korotkov ; Tim Anderson ; Lisa McElwee-White
• 刊名：Chemistry of Materials
• 出版年：2015
• 出版时间：December 22, 2015
• 年：2015
• 卷：27
• 期：24
• 页码：8326-8336
• 全文大小：706K
• ISSN：1520-5002

文摘

Tungsten nitrido complexes of the type WN(NR₂)₃ [NR₂ = combinations of NMe₂, NEt₂, NⁱPr₂, NⁿPr₂, NⁱBu₂, piperidine, and azepane] were synthesized as precursors for aerosol-assisted chemical vapor deposition of WN_xC_y thin films. The effects of the amido substituents on precursor volatility and decomposition were evaluated experimentally and computationally. Films deposited using WN(NMe₂)(NⁱPr₂)₂ as a single-source precursor were assessed as diffusion barrier materials for Cu metallized integrated circuits in terms of growth rate, surface roughness, composition, and density. In diffusion barrier tests, Cu (鈭?00 nm)/WN_xC_y (鈭? nm)/Si samples prepared from WN(NMe₂)(NⁱPr₂)₂ were annealed for 30 min at 500 掳C and successfully blocked Cu penetration according to four-point probe, X-ray diffraction, scanning electron microscopy etch-pit test, and high-resolution transmission electron microscopy measurements.