Direct Measurement of the Electrical Abruptness of a Nanowire p–n Junction

详细信息    查看全文

• 作者：Ali Darbandi ; James C. McNeil ; Azadeh Akhtari-Zavareh ; Simon P. Watkins ; Karen L. Kavanagh
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：July 13, 2016
• 年：2016
• 卷：16
• 期：7
• 页码：3982-3988
• 全文大小：494K
• 年卷期：0
• ISSN：1530-6992

文摘

Electrostatic potential maps of GaAs nanowire, p–n junctions have been measured via off-axis electron holography and compared to results from in situ electrical probing, and secondary electron emission microscopy using scanning electron microscopy. The built-in potential and depletion length of an axial junction was found to be 1.5 ± 0.1 V and 74 ± 9 nm, respectively, to be compared with 1.53 V and 64 nm of an abrupt junction of the same end point carrier concentrations. Associated with the switch from Te to Zn dopant precursor was a reduction in GaAs nanowire diameter 3 ± 1 nm that occurred prior to the junction center (n = p) and was followed by a rapid increase in Zn doping. The delay in Zn incorporation is attributed to the time required for Zn to equilibrate within the Au catalyst.