Vapor Trapping Growth of Single-Crystalline Graphene Flowers: Synthesis, Morphology, and Electronic Properties

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• 作者：Yi Zhang ; Luyao Zhang ; Pyojae Kim ; Mingyuan Ge ; Zhen Li ; Chongwu Zhou
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：June 13, 2012
• 年：2012
• 卷：12
• 期：6
• 页码：2810-2816
• 全文大小：462K
• 年卷期：v.12,no.6(June 13, 2012)
• ISSN：1530-6992

文摘

We report a vapor trapping method for the growth of large-grain, single-crystalline graphene flowers with grain size up to 100 渭m. Controlled growth of graphene flowers with four lobes and six lobes has been achieved by varying the growth pressure and the methane to hydrogen ratio. Surprisingly, electron backscatter diffraction study revealed that the graphene morphology had little correlation with the crystalline orientation of underlying copper substrate. Field effect transistors were fabricated based on graphene flowers and the fitted device mobility could achieve 4200 cm² V^鈥? s^鈥? on Si/SiO₂ and 20鈥?00 cm² V^鈥?聽s^鈥? on hexagonal boron nitride (h-BN). Our vapor trapping method provides a viable way for large-grain single-crystalline graphene synthesis for potential high-performance graphene-based electronics.

Keywords:

Vapor trapping; graphene growth; large-grain graphene; morphology; graphene transistors