In-Plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates
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- 作者：Linwei Yu ; Mingkun Xu ; Jie Xu ; Zhaoguo Xue ; Zheng Fan ; Gennaro Picardi ; Franck Fortuna ; Junzhuan Wang ; Jun Xu ; Yi Shi ; Kunji Chen ; Pere Roca i Cabarrocas
- 刊名：Nano Letters
- 出版年：2014
- 出版时间：November 12, 2014
- 年：2014
- 卷：14
- 期：11
- 页码：6469-6474
- 全文大小：405K
- ISSN：1530-6992
文摘
Growing self-assembled silicon nanowires (SiNWs) into precise locations represents a critical capability to scale up SiNW-based functionalities. We here report a novel epitaxy growth phenomenon and strategy to fabricate orderly arrays of self-aligned in-plane SiNWs on Si(100) substrates following exactly the underlying crystallographic orientations. We observe also a rich set of distinctive growth dynamics/modes that lead to remarkably different morphologies of epitaxially grown SiNWs/or grains under variant growth balance conditions. High-resolution transmission electron microscopy cross-section analysis confirms a coherent epitaxy (or partial epitaxy) interface between the in-plane SiNWs and the Si(100) substrate, while conductive atomic force microscopy characterization reveals that electrically rectifying p鈥?/i>n junctions are formed between the p-type doped in-plane SiNWs and the n-type c-Si(100) substrate. This in-plane epitaxy growth could provide an effective means to define nanoscale junction and doping profiles, providing a basis for exploring novel nanoelectronics.