Tin Disulfide鈥擜n Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics

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• 作者：Yuan Huang ; Eli Sutter ; Jerzy T. Sadowski ; Mircea Cotlet ; Oliver L.A. Monti ; David A. Racke ; Mahesh R. Neupane ; Darshana Wickramaratne ; Roger K. Lake ; Bruce A. Parkinson ; Peter Sutter
• 刊名：ACS Nano
• 出版年：2014
• 出版时间：October 28, 2014
• 年：2014
• 卷：8
• 期：10
• 页码：10743-10755
• 全文大小：870K
• ISSN：1936-086X

文摘

Layered metal dichalcogenides have attracted significant interest as a family of single- and few-layer materials that show new physics and are of interest for device applications. Here, we report a comprehensive characterization of the properties of tin disulfide (SnS₂), an emerging semiconducting metal dichalcogenide, down to the monolayer limit. Using flakes exfoliated from layered bulk crystals, we establish the characteristics of single- and few-layer SnS₂ in optical and atomic force microscopy, Raman spectroscopy and transmission electron microscopy. Band structure measurements in conjunction with ab initio calculations and photoluminescence spectroscopy show that SnS₂ is an indirect bandgap semiconductor over the entire thickness range from bulk to single-layer. Field effect transport in SnS₂ supported by SiO₂/Si suggests predominant scattering by centers at the support interface. Ultrathin transistors show on鈥搊ff current ratios >10⁶, as well as carrier mobilities up to 230 cm²/(V s), minimal hysteresis, and near-ideal subthreshold swing for devices screened by a high-k (deionized water) top gate. SnS₂ transistors are efficient photodetectors but, similar to other metal dichalcogenides, show a relatively slow response to pulsed irradiation, likely due to adsorbate-induced long-lived extrinsic trap states.

Keywords:

tin disulfide; 2D materials; monolayer; field-effect transistor; photodetector; charge transport