Control of Density of Randomly Grown OMCVD Gold Nanoparticles by Means of Ion Irradiation
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- 作者：Asad Rezaee ; Anne Kathrena A. Aliganga ; Silvia Mittler
- 刊名：Journal of Physical Chemistry C
- 出版年：2009
- 出版时间：September 10, 2009
- 年：2009
- 卷：113
- 期：36
- 页码：15824-15833
- 全文大小：470K
- 年卷期：v.113,no.36(September 10, 2009)
- ISSN：1932-7455
文摘
A new method is presented, which statistically controls the density of randomly deposited gold nanoparticles (Au NPs), based on three well-known techniques: self-assembly, ion irradiation, and organometallic chemical vapor deposition (OMCVD). Silicon substrates were coated with a CH3-terminated self-assembled monolayer (SAM) as a resist. A beam of accelerated Cu− ions was applied in different doses to damage/remove the CH3-terminated SAM on half the sample area to provide an “empty” surface to self-assemble a mercapto-containing molecule allowing Au NP growth, while the other half is protected by a mask. Contact angle measurements and X-ray photoelectron spectroscopy (XPS) in both survey and high-resolution modes were implemented to study the dose-dependent removal process on the ion-irradiated sides, as well as the uniformity of the SAM coverage on the unirradiated sides. The second SAM deposition process with the mercapto moiety was performed on all samples for a selective recoating of the ion-irradiated sides. Au NPs were grown by OMCVD onto the SH groups. The amount dependence of the Au NPs on the ion dose was studied by Rutherford backscattering spectroscopy (RBS) and high-resolution XPS. Scanning electron microscopy (SEM) image analysis were used to investigate the changes in the density and in the average spacing of the OMCVD grown Au NPs with varying ion dose. In addition, the formation of OMCVD Au NP clusters and its dose dependence in the absence of the SH-terminated SAM was studied by RBS and SEM.