Switching the Charge State of Individual Surface Atoms at Si(111)-鈭? 脳 鈭?:B Surfaces

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• 作者：Daejin Eom ; Chang-Youn Moon ; Ja-Yong Koo
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：January 14, 2015
• 年：2015
• 卷：15
• 期：1
• 页码：398-402
• 全文大小：382K
• ISSN：1530-6992

文摘

We show that each surface atom of heavily boron-doped, (111)-oriented silicon with a 鈭? 脳 鈭? reconstruction has electrically switchable two charge states due to the strong electron鈥搇attice coupling at this surface. The structural and electronic properties of the two charge states as well as their energetics are uncovered by employing scanning tunneling microscopy measurements and density functional theory calculations, which reveals that one of the two is a two-electron bound state or surface bipolaron. We also execute the single-atom bit operations on individual surface atoms by controlling their charge states while demonstrating implementation of the atomic scale memory at a silicon surface with an unprecedented recording density.