Interplay between Switching Driven by the Tunneling Current and Atomic Force of a Bistable Four-Atom Si Quantum Dot

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• 作者：Shiro Yamazaki ; Keisuke Maeda ; Yoshiaki Sugimoto ; Masayuki Abe ; Vladim铆r Zoba膷 ; Pablo Pou ; Lucia Rodrigo ; Pingo Mutombo ; Ruben P茅rez ; Pavel Jel铆nek ; Seizo Morita
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：July 8, 2015
• 年：2015
• 卷：15
• 期：7
• 页码：4356-4363
• 全文大小：574K
• ISSN：1530-6992

文摘

We assemble bistable silicon quantum dots consisting of four buckled atoms (Si₄-QD) using atom manipulation. We demonstrate two competing atom switching mechanisms, downward switching induced by tunneling current of scanning tunneling microscopy (STM) and opposite upward switching induced by atomic force of atomic force microscopy (AFM). Simultaneous application of competing current and force allows us to tune switching direction continuously. Assembly of the few-atom Si-QDs and controlling their states using versatile combined AFM/STM will contribute to further miniaturization of nanodevices.