CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films

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• 作者：Michael E. Ramón ; Aparna Gupta ; Chris Corbet ; Domingo A. Ferrer ; Hema C. P. Movva ; Gary Carpenter ; Luigi Colombo ; George Bourianoff ; Mark Doczy ; Deji Akinwande ; Emanuel Tutuc ; Sanjay K. Banerjee
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：September 27, 2011
• 年：2011
• 卷：5
• 期：9
• 页码：7198-7204
• 全文大小：946K
• 年卷期：0
• ISSN：1936-086X

文摘

We demonstrate the synthesis of large-area graphene on Co, a complementary metal-oxide-semiconductor (CMOS)-compatible metal, using acetylene (C₂H₂) as a precursor in a chemical vapor deposition (CVD)-based method. Cobalt films were deposited on SiO₂/Si, and the influence of Co film thickness on monolayer graphene growth was studied, based on the solubility of C in Co. The surface area coverage of monolayer graphene was observed to increase with decreasing Co film thickness. A thorough Raman spectroscopic analysis reveals that graphene films, grown on an optimized Co film thickness, are principally composed of monolayer graphene. Transport properties of monolayer graphene films were investigated by fabrication of back-gated graphene field-effect transistors (GFETs), which exhibited high hole and electron mobility of ∼1600 cmp>2p>/V s and ∼1000 cmp>2p>/V s, respectively, and a low trap density of ∼1.2 × 10p>11p> cmp>–2p>.