Electrochemical Deposition of Germanium Sulfide from Room-Temperature Ionic Liquids and Subsequent Ag Doping in an Aqueous Solution

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• 作者：Sankaran Murugesan ; Patrick Kearns ; Keith J. Stevenson
• 刊名：Langmuir
• 出版年：2012
• 出版时间：April 3, 2012
• 年：2012
• 卷：28
• 期：13
• 页码：5513-5517
• 全文大小：315K
• 年卷期：v.28,no.13(April 3, 2012)
• ISSN：1520-5827

文摘

A facile room-temperature electrochemical deposition process for germanium sulfide (GeS_x) has been developed with the use of an ionic liquid as an electrolyte. The electrodeposition mechanism follows the induced codeposition of Ge and S precursors in ionic liquids generating GeS_x films. The electrodeposited GeS_x films were characterized by scanning electron microscopy-energy dispersive X-ray spectroscopy (SEM-EDS) and Raman and X-ray photoelectron spectroscopy (XPS). An aqueous-based Ag doping method was used to dope electrochemically grown GeS_x films with controlled doping compared to the conventional process, which can be used in next-generation solid-state memory devices.