文摘
A design for a heteroepitaxial junction by the way of one-dimensional wurzite on a two-dimensional spinel structure in a low-temperature solution process was introduced, and it's capability was confirmed by successful fabrication of a diode consisting of p-type cobalt oxide (Co3O4) nanoplate/n-type zinc oxide (ZnO) nanorods, showing reasonable electrical performance. During thermal decomposition, the 30掳 rotated lattice orientation of Co3O4 nanoplates from the orientation of 尾-Co(OH)2 nanoplates was directly observed using high-resolution transmission electron microscopy. The epitaxial relations and the surface stress-induced ZnO nanowire growth on Co3O4 were well supported using the first-principles calculations. Over the large area, (0001) preferred oriented ZnO nanorods epitaxially grown on the (111) plane of Co3O4 nanoplates were experimentally obtained. Using this epitaxial p鈥搉 junction, a diode was fabricated. The ideality factor, turn-on voltage, and rectifying ratio of the diode were measured to be 2.38, 2.5 V and 104, respectively.
Keywords:
Epitaxial growth; spinel cobalt (II,III) oxide nanoplate; wurzite ZnO nanorod; heterogeneous p鈭抧 junction