High-Temperature Chemical Vapor Deposition for SiC Single Crystal Bulk Growth Using Tetramethylsilane as a Precursor

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• 作者：Deok-Hui Nam ; Byeong Geun Kim ; Ji-Young Yoon ; Myung-Hyun Lee ; Won-Seon Seo ; Seong-Min Jeong ; Cheol-Woong Yang ; Won-Jae Lee
• 刊名：Crystal Growth & Design
• 出版年：2014
• 出版时间：November 5, 2014
• 年：2014
• 卷：14
• 期：11
• 页码：5569-5574
• 全文大小：379K
• ISSN：1528-7505

文摘

SiC single bulk crystals were grown using a high-temperature chemical vapor deposition (HTCVD) method, with SiH₄ and hydrocarbons as the source materials. SiH₄ is a pyrophoric gas, which frequently causes fatal accidents in experiments. In this study, therefore, we propose the use of a HTCVD method using tetramethylsilane (TMS), a cheap and safe precursor, for growing SiC bulk crystals. Although TMS contains C four times more than Si in its chemical formula, a stoichiometric SiC layer was successfully synthesized from TMS in the presence of a high concentration of H₂ based on the thermodynamic process design. 6H-SiC single crystals were successfully grown on a 6H-SiC seed crystal using the same process conditions. The resulting single crystalline layer was evaluated by rocking curve analysis by X-ray diffraction, which showed that the crystal properties of the grown SiC layer were improved compared to the seed crystals. This suggests that the TMS-based HTCVD method is feasible for practical use in SiC bulk growth.