Growth and Structure of Ce(O,F)SbS2 Single Crystals

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• 作者：Masanori Nagao ; Masashi Tanaka ; Ryo Matsumoto ; Hiromi Tanaka ; Satoshi Watauchi ; Yoshihiko Takano ; Isao Tanaka
• 刊名：Crystal Growth & Design
• 出版年：2016
• 出版时间：May 4, 2016
• 年：2016
• 卷：16
• 期：5
• 页码：3037-3042
• 全文大小：401K
• 年卷期：0
• ISSN：1528-7505

文摘

Ce(O,F)SbS₂ single crystals were successfully grown using a CsCl/KCl flux method. All of the obtained crystals have a plate-like shape with a typical size of 1–3 mm in a well-developed plane. The c-axis lattice parameter of Ce(O,F)SbS₂ tends to decrease with an increase of the F-content in the crystals. The crystal structure of CeOSbS₂ was determined to be monoclinic P2₁/m with lattice parameters of a = 4.031(6) Å, b = 4.034(6) Å, c = 13.06(2) Å, β = 97.461(13)° by single crystal X-ray structural analysis. The bond valence sum estimation and X-ray photoelectron spectroscopy analysis showed that the chemical state of Ce was in the mixed valence of Ce³⁺ and Ce⁴⁺. The Ce(O,F)SbS₂ was insulating with high electrical resistivity more than ∼10 kΩ·cm at room temperature and showed a magnetic transition around 6 K. Single crystals of R(O,F)SbS₂ (R = La, Pr, Nd) with a similar plate-like shape also could be grown with the same method.