Self-Assembled Growth of Ga Droplets on GaAs(001): Role of Surface Reconstructions

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• 作者：Akihiro Ohtake ; Takaaki Mano ; Atsushi Hagiwara ; Jun Nakamura
• 刊名：Crystal Growth & Design
• 出版年：2014
• 出版时间：June 4, 2014
• 年：2014
• 卷：14
• 期：6
• 页码：3110-3115
• 全文大小：478K
• 年卷期：v.14,no.6(June 4, 2014)
• ISSN：1528-7505

文摘

Formation processes of Ga droplets on GaAs(001) have been systematically studied. We present the evidence that the surface atomic structures of the GaAs substrate dominate the surface diffusion of Ga atoms, which plays a key role in determining the size and density of Ga droplets. The Ga droplets are formed on the As-rich (2 脳 4) and c(4 脳 4)尾 surface after the modification of the initial surface reconstructions, while droplets are directly formed on the Ga-rich (4 脳 6) surface. The density of Ga droplets on the (4 脳 6) surface exceeds 10¹² cm^鈥?, which is significantly higher than that on the As-rich c(4 脳 4)尾 surfaces.