Engineering of the Energy Level Alignment at Organic Semiconductor Interfaces by Intramolecular Degrees of Freedom: Transition Metal Phthalocyanines

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• 作者：M. Grobosch ; V. Yu. Aristov ; O. V. Molodtsova ; C. Schmidt ; B. P. Doyle ; S. Nannarone ; M. Knupfer
• 刊名：Journal of Physical Chemistry C
• 出版年：2009
• 出版时间：July 30, 2009
• 年：2009
• 卷：113
• 期：30
• 页码：13219-13222
• 全文大小：120K
• 年卷期：v.113,no.30(July 30, 2009)
• ISSN：1932-7455

文摘

We have determined the energy level alignment at interfaces between various transition metal phthalocyanines (MnPc, FePc, CoPc, NiPc, CuPc, ZnPc) and gold using photoemission spectroscopy. We demonstrate that the energy level alignment at these interfaces depends upon the type of transition metal. This offers a route to adjust the hole injection barrier via the choice of otherwise equivalent molecular organic semiconductors. In particular, the interfaces MnPc/Au and CoPc/Au are characterized by a small hole injection barrier, which would be advantageous for applications.