Etching or Stabilization of GaAs(001) under Alkali and Halogen Adsorption

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• 作者：O. E. Tereshchenko ; D. Paget ; K. V. Toropetsky ; V. L. Alperovich ; S. V. Eremeev ; A. V. Bakulin ; S. E. Kulkova ; B. P. Doyle ; S. Nannarone
• 刊名：The Journal of Physical Chemistry C
• 出版年：2012
• 出版时间：April 19, 2012
• 年：2012
• 卷：116
• 期：15
• 页码：8535-8540
• 全文大小：333K
• 年卷期：v.116,no.15(April 19, 2012)
• ISSN：1932-7455

文摘

Experimentally and by ab initio calculations it is shown that adsorption of electropositive cesium on the As-rich surface of GaAs(001) and, in a symmetric fashion, adsorption of electronegative iodine on the Ga-rich surface, induce a decrease of the surface stability, thus facilitating surface etching. Conversely, Cs adsorption on the Ga-rich surface and I adsorption on the As-rich surface lead to an increased surface stability. Etching occurs when adsorption-induced charge transfer weakens the backbonds of the top arsenic atoms for the case of Cs on the As-rich 尾2(2 脳 4) surface and the lateral bonds in the topmost surface layer for I on the Ga-rich 味(4 脳 2) surface. The possibilities of reversible transitions between the two reconstructed surfaces and of atomic layer etching with monolayer precision are demonstrated.