Plasmon-Assisted Photoresponse in Ge-Coated Bowtie Nanojunctions

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• 作者：Kenneth M. Evans ; Pavlo Zolotavin ; Douglas Natelson
• 刊名：ACS Photonics
• 出版年：2015
• 出版时间：August 19, 2015
• 年：2015
• 卷：2
• 期：8
• 页码：1192-1198
• 全文大小：558K
• ISSN：2330-4022

文摘

We demonstrate plasmon-enhanced photoconduction in Au bowtie nanojunctions containing nanogaps overlaid with an amorphous Ge film. The role of plasmons in the production of nanogap photocurrent is verified by studying the unusual polarization dependence of the photoresponse. With increasing Ge thickness, the nanogap polarization of the photoresponse rotates 90掳, indicating a change in the dominant relevant plasmon mode, from the resonant transverse plasmon at low thicknesses to the nonresonant 鈥渓ightning rod鈥?mode at higher thicknesses. To understand the plasmon response in the presence of the Ge overlayer and whether the Ge degrades the Au plasmonic properties, we investigate the photothermal response (from the temperature-dependent Au resistivity) in no-gap nanowire structures, as a function of Ge film thickness and nanowire geometry. The film thickness and geometry dependence are modeled using a cross-sectional, finite element simulation. The no-gap structures and the modeling confirm that the striking change in nanogap polarization response results from redshifting of the resonant transverse mode, rather than degradation in the Au/Ge properties. We note remaining challenges in determining the precise mechanism of photocurrent production in the nanogap structures.