Graphene鈥揝ilicon Heterostructures at the Two-Dimensional Limit

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• 作者：Brian Kiraly ; Andrew J. Mannix ; Mark C. Hersam ; Nathan P. Guisinger
• 刊名：Chemistry of Materials
• 出版年：2015
• 出版时间：September 8, 2015
• 年：2015
• 卷：27
• 期：17
• 页码：6085-6090
• 全文大小：364K
• ISSN：1520-5002

文摘

The integration of heterogeneous two-dimensional materials has the potential to yield electronic behavior approaching theoretical limits and facilitate the exploration of new fundamental physical phenomena. Here, we report the integration of graphene with two-dimensional, semiconducting crystalline silicon. Sequential deposition of carbon and silicon on Ag(111) in ultrahigh vacuum results in the synthesis of both lateral and vertical graphene鈥搒ilicon heterostructures. The one-dimensional in-plane interfaces demonstrate atomically precise material transitions both structurally and electronically. The vertical heterostructures show noninteracting van der Waals behavior as shown by energetically resolved scanning tunneling microscopy coupled with ex-situ Raman analysis. The pristine and direct integration of graphene with two-dimensional, semiconducting crystalline silicon couples two of the most studied electronic materials into a hybrid structure with high potential for next-generation nanoelectronics.