Computational Analysis and Optimization of a Chemical Vapor Deposition Reactor with Large-Scale Computing

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• 作者：Andrew G. Salinger ; Roger P. Pawlowski ; John N. Shadid ; and Bart G. van Bloemen Waanders
• 刊名：Industrial & Engineering Chemistry Research
• 出版年：2004
• 出版时间：August 4, 2004
• 年：2004
• 卷：43
• 期：16
• 页码：4612 - 4623
• 全文大小：440K
• 年卷期：v.43,no.16(August 4, 2004)
• ISSN：1520-5045

文摘

A computational analysis and optimization is presented for the chemical vapor deposition (CVD)of silicon in a horizontal rotating-disk reactor. A three-dimensional reactor-scale model for thegas flow, heat transfer, and mass transfer in a CVD reactor is coupled to a simple transport-limited surface reaction mechanism for the deposition of epitaxial silicon from trichlorosilane.The model is solved to steady state for the deposition rate profile over the 8-in. silicon waferusing an unstructured-grid finite-element method and a fully coupled inexact Newton methodon parallel computers. Because a high degree of spatial uniformity in the deposition rate isdesired, parameter continuation runs for six key operating parameters, including the inlet flowrate and the rotation rate of the substrate, were performed and their individual effects analyzed.Finally, optimization runs were performed that located operating conditions that predictnonuniformity as low as 0.1%.