Inkjet Printed, High Mobility Inorganic-Oxide Field Effect Transistors Processed at Room Temperature

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• 作者：Subho Dasgupta ; Robert Kruk ; Norman Mechau ; Horst Hahn
• 刊名：ACS Nano
• 出版年：2011
• 出版时间：December 27, 2011
• 年：2011
• 卷：5
• 期：12
• 页码：9628-9638
• 全文大小：1316K
• 年卷期：0
• ISSN：1936-086X

文摘

Printed electronics (PE) represents any electronic devices, components or circuits that can be processed using modern-day printing techniques. Field-effect transistors (FETs) and logics are being printed with intended applications requiring simple circuitry on large, flexible (e.g., polymer) substrates for low-cost and disposable electronics. Although organic materials have commonly been chosen for their easy printability and low temperature processability, high quality inorganic oxide-semiconductors are also being considered recently. The intrinsic mobility of the inorganic semiconductors are always by far superior than the organic ones; however, the commonly expressed reservations against the inorganic-based printed electronics are due to major issues, such as high processing temperatures and their incompatibility with solution-processing. Here we show a possibility to circumvent these difficulties and demonstrate a room-temperature processed and inkjet printed inorganic-oxide FET where the transistor channel is composed of an interconnected nanoparticle network and a solid polymer electrolyte serves as the dielectric. Even an extremely conservative estimation of the field-effect mobility of such a device yields a value of 0.8 cm²/(V s), which is still exceptionally large for a room temperature processed and printed transistor from inorganic materials.