In this artic
le, we report the characterization of a series of thiophene- and se
lenophene-based heteroacenes,materia
ls with potentia
l app
lications in organic e
lectronics. In contrast to the usua
l lpha.gif" BORDER=0>-o
ligothiophenes, theseanne
lated o
ligomers have a
larger band gap than most semicondu
ctors current
ly used in the fabrication oforganic fie
ld-effect transistors (OFETs) and therefore they are expected to be more stab
le in air. The synthesisof these fused-ring mo
lecu
lar materia
ls was motivated by the notion that a more rigid and p
lanar structureshou
ld reduce defects (such as torsion about sing
le bonds between
lpha.gif" BORDER=0>-
linked units or S-
syn defects) and thusimprove
-conjugation for better charge-carrier mobi
lity. The conjugationa
l properties of these heteroaceneshave been investigated by means of FT-Raman spectroscopy, revea
ling that
-conjugation increases with theincreasing number of anne
lated rings. DFT and TDDFT quantum chemica
l ca
lcu
lations have been performed,at the B3LYP/6-31G**
leve
l, to assess information regarding the minimum-energy mo
lecu
lar structure,topo
logies, and abso
lute energies of the frontier mo
lecu
lar orbita
ls around the gap, vibrationa
l norma
l modesre
lated to the main Raman features, and vertica
l one-e
lectron excitations giving rise to the main optica
labsorptions.