Dramatic Enhancement in Photoresponse of 尾-In2S3 through Suppression of Dark Conductivity by Synthetic Control of Defect-Induced Carrier Compensation

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• 作者：Nilima Chaudhari ; Lily Mandal ; Onkar Game ; Sambhaji Warule ; Deodatta Phase ; Sandesh Jadkar ; Satishchandra Ogale
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：August 19, 2015
• 年：2015
• 卷：7
• 期：32
• 页码：17671-17681
• 全文大小：697K
• ISSN：1944-8252

文摘

We report on the synthesis of dense and faceted indium sulfide (尾-In<sub>2sub>S<sub>3sub>) nano-octahedron films on fluorine-doped tin oxide-coated glass by the hydrothermal method and their photoresponse properties in a flip chip device configuration. We have examined the temporal evolution of the phase constitution, morphology, and optoelectronic properties for films obtained after growth interruption at specific intervals. It is noted that, initially, an In(OH)<sub>3sub> film forms, which is gradually transformed to the 尾-In<sub>2sub>S<sub>3sub> phase over time. In the case of the film wherein most, but not all, of In(OH)<sub>3sub> is consumed, an exceptionally large photoresponse (light to dark current ratio) of 鈭?0<sup>4sup> and response time(s) (rise/fall) of 鈭?8/280 ms are realized. This superior performance is attributed to nearly complete carrier compensation achievable in the system under high pressure growth leading to dramatic reduction of dark conductivity. It is argued that the temporally growth-controlled equilibrium between quasi-In interstitials and cation vacancies dictates the optoelectronic properties.