Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil Using Chemical Vapor Deposition
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- 作者：Ki Kang Kim ; Allen Hsu ; Xiaoting Jia ; Soo Min Kim ; Yumeng Shi ; Mario Hofmann ; Daniel Nezich ; Joaquin F. Rodriguez-Nieva ; Mildred Dresselhaus ; Tomas Palacios ; Jing Kong
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：January 11, 2012
- 年：2012
- 卷：12
- 期：1
- 页码：161-166
- 全文大小：418K
- 年卷期：v.12,no.1(January 11, 2012)
- ISSN：1530-6992
文摘
Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly, as protective coating, dielectric layer/substrate, transparent membrane, or deep ultraviolet emitter. In this work, we carried out a detailed investigation of h-BN synthesis on Cu substrate using chemical vapor deposition (CVD) with two heating zones under low pressure (LP). Previous atmospheric pressure (AP) CVD syntheses were only able to obtain few layer h-BN without a good control on the number of layers. In contrast, under LPCVD growth, monolayer h-BN was synthesized and time-dependent growth was investigated. It was also observed that the morphology of the Cu surface affects the location and density of the h-BN nucleation. Ammonia borane is used as a BN precursor, which is easily accessible and more stable under ambient conditions than borazine. The h-BN films are characterized by atomic force microscopy, transmission electron microscopy, and electron energy loss spectroscopy analyses. Our results suggest that the growth here occurs via surface-mediated growth, which is similar to graphene growth on Cu under low pressure. These atomically thin layers are particularly attractive for use as atomic membranes or dielectric layers/substrates for graphene devices.