Black Phosphorus鈥揗onolayer MoS2 van der Waals Heterojunction p鈥搉 Diode
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- 作者：Yexin Deng ; Zhe Luo ; Nathan J. Conrad ; Han Liu ; Yongji Gong ; Sina Najmaei ; Pulickel M. Ajayan ; Jun Lou ; Xianfan Xu ; Peide D. Ye
- 刊名：ACS Nano
- 出版年：2014
- 出版时间：August 26, 2014
- 年：2014
- 卷：8
- 期：8
- 页码：8292-8299
- 全文大小：501K
- ISSN：1936-086X
文摘
Phosphorene, a elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier mobility (鈭?0鈥?00 cm2/V路s) and a 鈭?.3 eV direct band gap. Well-behaved p-type field-effect transistors with mobilities of up to 1000 cm2/V路s, as well as phototransistors, have been demonstrated on few-layer black phosphorus, showing its promise for electronics and optoelectronics applications due to its high hole mobility and thickness-dependent direct band gap. However, p鈥搉 junctions, the basic building blocks of modern electronic and optoelectronic devices, have not yet been realized based on black phosphorus. In this paper, we demonstrate a gate-tunable p鈥搉 diode based on a p-type black phosphorus/n-type monolayer MoS2 van der Waals p鈥搉 heterojunction. Upon illumination, these ultrathin p鈥搉 diodes show a maximum photodetection responsivity of 418 mA/W at the wavelength of 633 nm and photovoltaic energy conversion with an external quantum efficiency of 0.3%. These p鈥搉 diodes show promise for broad-band photodetection and solar energy harvesting.