Chemical Doping and Electron−Hole Conduction Asymmetry in Graphene Devices

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• 作者：Damon B. Farmer ; Roksana Golizadeh-Mojarad ; Vasili Perebeinos ; Yu-Ming Lin ; George S. Tulevski ; James C. Tsang ; Phaedon Avouris
• 刊名：Nano Letters
• 出版年：2009
• 出版时间：January 14, 2009
• 年：2009
• 卷：9
• 期：1
• 页码：388-392
• 全文大小：236K
• 年卷期：v.9,no.1(January 14, 2009)
• ISSN：1530-6992

文摘

We investigate poly(ethylene imine) and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Greenʼs function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.