Controllable p-n Junction Formation in Monolayer Graphene Using Electrostatic Substrate Engineering

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• 作者：Hsin-Ying Chiu ; Vasili Perebeinos ; Yu-Ming Lin ; Phaedon Avouris
• 刊名：Nano Letters
• 出版年：2010
• 出版时间：November 10, 2010
• 年：2010
• 卷：10
• 期：11
• 页码：4634-4639
• 全文大小：454K
• 年卷期：v.10,no.11(November 10, 2010)
• ISSN：1530-6992

文摘

We investigate electric transport in graphene on SiO₂ in the high field limit and report on the formation of p-n junctions. Previously, doping of graphene has been achieved by using multiple electrostatic gates, or charge transfer from adsorbants. Here we demonstrate a novel approach to create p-n junctions by changing the local electrostatic potential in the vicinity of one of the contacts without the use of extra gates. The approach is based on the electronic modification not of the graphene but of the substrate and produces a well-behaved, sharp junction whose position and height can be controlled.

Keywords:

Graphene; transistor; p-n junction; high-field transport; trap charges; substrate