Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers
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- 作者：Wenjuan Zhu ; Deborah Neumayer ; Vasili Perebeinos ; Phaedon Avouris
- 刊名：Nano Letters
- 出版年：2010
- 出版时间：September 8, 2010
- 年：2010
- 卷：10
- 期：9
- 页码：3572-3576
- 全文大小：429K
- 年卷期：v.10,no.9(September 8, 2010)
- ISSN：1530-6992
文摘
We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron−hole puddles) near the Dirac point we estimate the field-induced band gap or band overlap in the different layers.