Quantum Behavior of Graphene Transistors near the Scaling Limit
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- 作者：Yanqing Wu ; Vasili Perebeinos ; Yu-ming Lin ; Tony Low ; Fengnian Xia ; Phaedon Avouris
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：March 14, 2012
- 年：2012
- 卷：12
- 期：3
- 页码：1417-1423
- 全文大小：341K
- 年卷期：v.12,no.3(March 14, 2012)
- ISSN：1530-6992
文摘
The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly resolved Fabry鈥揚erot oscillations in sub-100 nm devices. By aggressively scaling the channel length down to 50 nm, we study the evolution of the graphene transistor from the channel-dominated diffusive regime to the contact-dominated ballistic regime. Key issues such as the current asymmetry, the question of Fermi level pinning by the contacts, the graphene screening determining the heterojunction barrier width, the scaling of minimum conductivity, and of the on/off current ratio are investigated.