Atom Probe Tomography Analysis of Boron and/or Phosphorus Distribution in Doped Silicon Nanocrystals

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• 作者：Keita Nomoto ; Hiroshi Sugimoto ; Andrew Breen ; Anna V. Ceguerra ; Takashi Kanno ; Simon P. Ringer ; Ivan Perez Wurfl ; Gavin Conibeer ; Minoru Fujii
• 刊名：Journal of Physical Chemistry C
• 出版年：2016
• 出版时间：August 11, 2016
• 年：2016
• 卷：120
• 期：31
• 页码：17845-17852
• 全文大小：559K
• 年卷期：0
• ISSN：1932-7455

文摘

Silicon nanocrystals (Si NCs) are intensively studied for optoelectronic and biological applications due to having highly attractive features such as band engineering. Although doping is often used to control the optical and electrical properties, the related structural properties of solely doped and codoped Si NCs are not well-understood. In this study, we report the boron (B) and/or phosphorus (P) distribution in Si NCs embedded in borosilicate glass (BSG), phosphosilicate glass (PSG), and borophosphosilicate glass (BPSG) using atom probe tomography (APT). We compared solely and codoped Si NCs grown at different temperatures so that we may compare the effects of codoping and temperature on the B and/or P distribution. Proximity histograms and cluster analyses reveal that there exist boron-rich layers surrounding Si NCs and also B–P clusters within the Si NCs. Raman spectra also show a structural change between codoped Si NCs in solids and free-standing codoped Si NCs. These results lead us to understand that codoped Si NCs disperse in polar solvents.