PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm2 V鈥? s鈥?

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• 作者：Yao Liu ; Jason Tolentino ; Markelle Gibbs ; Rachelle Ihly ; Craig L. Perkins ; Yu Liu ; Nathan Crawford ; John C. Hemminger ; Matt Law
• 刊名：Nano Letters
• 出版年：2013
• 出版时间：April 10, 2013
• 年：2013
• 卷：13
• 期：4
• 页码：1578-1587
• 全文大小：523K
• 年卷期：v.13,no.4(April 10, 2013)
• ISSN：1530-6992

文摘

PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm² V^鈥? s^鈥? are made by infilling sulfide-capped QD films with amorphous alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations. Partial infilling tunes the electrical characteristics of the FETs.

Keywords:

Quantum dots; nanocrystals; lead selenide; field-effect transistors; solar cells