Large Area Extreme-UV Lithography of Graphene Oxide via Spatially Resolved Photoreduction

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• 作者：S. Prezioso ; F. Perrozzi ; M. Donarelli ; F. Bisti ; S. Santucci ; L. Palladino ; M. Nardone ; E. Treossi ; V. Palermo ; L. Ottaviano
• 刊名：Langmuir
• 出版年：2012
• 出版时间：March 27, 2012
• 年：2012
• 卷：28
• 期：12
• 页码：5489-5495
• 全文大小：426K
• 年卷期：v.28,no.12(March 27, 2012)
• ISSN：1520-5827

文摘

The ability to pattern graphene over large areas with nanometer resolution is the current request for nanodevice fabrication at the industrial scale. Existing methods do not match high throughput with nanometer resolution. We propose a high-throughput resistless extreme-UV (EUV) photolithographic approach operating with sub-micrometer resolution on large area (10 mm²) graphene oxide (GO) films via spatially resolved photoreduction. The efficiency of EUV photoreduction is tested with 46.9 nm coherent light produced by a table top capillary discharge plasma source. Irradiated samples are studied by X-ray photoemission spectroscopy (XPS) and micro-Raman Spectroscopy (渭RS). XPS data show that 200 mJ/cm² EUV dose produces, onto pristine GO, a 6% increase of sp² carbon bonds and a 20% decrease of C鈥揙 bonds. 渭RS data demonstrate a photoreduction efficiency 2 orders of magnitude higher than the one reported in the literature for UV-assisted photoreduction. GO patterning is obtained modulating the EUV dose with a Lloyd鈥檚 interferometer. The lithographic features consist of GO stripes with modulated reduction degree. Such modulation is investigated and demonstrated by 渭RS on patterns with 2 渭m periodicity.