Doping-Induced Universal Conductance Fluctuations in GaN Nanowires

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• 作者：Matthias T. Elm ; Patrick Uredat ; Jan Binder ; Lars Ostheim ; Markus Sch盲fer ; Pascal Hille ; Jan M眉脽ener ; J枚rg Sch枚rmann ; Martin Eickhoff ; Peter J. Klar
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：December 9, 2015
• 年：2015
• 卷：15
• 期：12
• 页码：7822-7828
• 全文大小：464K
• ISSN：1530-6992

文摘

The transport properties of Ge-doped single GaN nanowires are investigated, which exhibit a weak localization effect as well as universal conductance fluctuations at low temperatures. By analyzing these quantum interference effects, the electron phase coherence length was determined. Its temperature dependence indicates that in the case of highly doped nanowires electron鈥揺lectron scattering is the dominant dephasing mechanism, while for the slightly doped nanowires dephasing originates from Nyquist-scattering. The change of the dominant scattering mechanism is attributed to a modification of the carrier confinement caused by the Ge-doping. The results demonstrate that the phase coherence length can be tuned by the donor concentration making Ge-doped GaN nanowires an ideal model system for studying the influence of impurities on quantum-interference effects in mesoscopic and nanoscale systems.