A novel precursor, hexakis[
![](/images/entities/mgr.gif)
-(diethylcarbamato-O:O')]-
4-oxotetrazinc, (Zn
4O(CO
2NEt
2)
6)(
1), for the single source chemical vapor deposition (SSCVD) growth of ZnO films has beendeveloped. The structure and chemistry of resultant films were characterized usingphotoemission spectroscopy and diffraction techniques as well as electron microscopy. Thepolycrystalline films are of relatively dense columnar structure and have preferred
c-axisorientation. Their morphology is very similar to that of RF sputtered films, but with thesignificant difference that they do not exhibit the strain and stress usually inherent in as-deposited RF sputtered films. Film preparation using Zn
4O(CO
2NEt
2)
6 is therefore a simpleone-step process with a lower overall production temperature required to produce high-quality films. Additionally, piezoelectric measurements of the films indicated piezoelectricresponses close to that of single-crystalline ZnO.