Photoelectrochemical Behavior of n-Type Si(111) Electrodes Coated With a Single Layer of Graphene

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• 作者：Adam C. Nielander ; Matthew J. Bierman ; Nicholas Petrone ; Nicholas C. Strandwitz ; Shane Ardo ; Fan Yang ; James Hone ; Nathan S. Lewis
• 刊名：Journal of the American Chemical Society
• 出版年：2013
• 出版时间：November 20, 2013
• 年：2013
• 卷：135
• 期：46
• 页码：17246-17249
• 全文大小：263K
• 年卷期：v.135,no.46(November 20, 2013)
• ISSN：1520-5126

文摘

The behavior of graphene-coated n-type Si(111) photoanodes was compared to the behavior of H-terminated n-type Si(111) photoanodes in contact with aqueous K₃[Fe(CN)₆]/K₄[Fe(CN)₆] as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. The n-Si/Graphene electrodes exhibited stable short-circuit photocurrent densities of over 10 mA cm^鈥? for >1000 s of continuous operation in aqueous electrolytes, whereas n-Si鈥揌 electrodes yielded a nearly complete decay of the current density within 100 s. The values of the open-circuit photovoltages and the flat-band potentials of the Si were a function of both the Fermi level of the graphene and the electrochemical potential of the electrolyte solution, indicating that the n-Si/Graphene did not form a buried junction with respect to the solution contact.