Ferromagnetic Properties of Y-Doped AlN Nanorods

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• 作者：Weiwei Lei ; Dan Liu ; Xin Chen ; Pinwen Zhu ; Qiliang Cui ; Guangtian Zou
• 刊名：Journal of Physical Chemistry C
• 出版年：2010
• 出版时间：September 23, 2010
• 年：2010
• 卷：114
• 期：37
• 页码：15574-15577
• 全文大小：279K
• 年卷期：v.114,no.37(September 23, 2010)
• ISSN：1932-7455

文摘

Room-temperature ferromagnetism has been observed in Y-doped AlN (AlN:Y) nanorods. Our first-principle calculations have demonstrated that the ferromagnetism in AlN:Y is from Al vacancies and that the introduction of nonmagnetic rare-earth element Y into AlN can significantly reduce the formation energy of Al vacancy which leads to high Al vacancies responsible for the observed ferromagnetism in AlN:Y nanorods. These findings illustrate an efficient way to reduce the formation energy of cation vacancy by doping nonmagnetic elements, such as Y, leading to ferromagnetism in semiconductors.