Structural Phase Transition and Electrical Transport Properties of CuInS2 Nanocrystals under High Pressure

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• 作者：Yan Li ; Ying Wang ; Ruilian Tang ; Xin Wang ; Pinwen Zhu ; Xudong Zhao ; Chunxiao Gao
• 刊名：Journal of Physical Chemistry C
• 出版年：2015
• 出版时间：February 12, 2015
• 年：2015
• 卷：119
• 期：6
• 页码：2963-2968
• 全文大小：411K
• ISSN：1932-7455

文摘

The structural and electrical transport behaviors of CuInS₂ nanocrystals under high pressure have been investigated using angle dispersive X-ray diffraction (ADXRD), in situ Hall effect, and temperature-dependent electrical resistivity measurements. A pressure-induced irreversible structure transformation from tetragonal phase to cubic phase has been confirmed at 10.9 GPa, which has noticeably elevated the transition pressure (1.4 GPa) in nanocrystals compared to the bulk CuInS₂. In addition, the pressure-dependent electrical transport parameters, such as Hall coefficient, Hall mobility, carrier concentration, and electrical resistivity, all show dramatic changes around 11 GPa, implying that the pressure-induced structure transformation of CuInS₂ can bring about a series of changes in the carrier transport properties. Specifically, the sign of the Hall coefficient is changed from negative to positive around 12 GPa, implying that CuInS₂ undergoes a carrier-type inversion from n- to p-type. In addition, the temperature-dependent electrical resistivity reveals that CuInS₂ is still a semiconductor after the phase transition but with an opposite trend in the variation of the activation energy for the ambient and high-pressure phases.