Current Saturation in Field Emission from H-Passivated Si Nanowires
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- 作者：May Choueib ; Richard Martel ; Costel Sorin Cojocaru ; Anthony Ayari ; Pascal Vincent ; Stephen T. Purcell
- 刊名：ACS Nano
- 出版年：2012
- 出版时间：August 28, 2012
- 年：2012
- 卷：6
- 期：8
- 页码：7463-7471
- 全文大小：812K
- 年卷期：v.6,no.8(August 28, 2012)
- ISSN：1936-086X
文摘
This paper explores the field emission (FE) properties of highly crystalline Si nanowires (NWs) with controlled surface passivation. The NWs were batch-grown by the vapor鈥搇iquid鈥搒olid process using Au catalysts with no intentional doping. The FE current鈥搗oltage characteristics showed quasi-ideal current saturation that resembles those predicted by the basic theory for emission from semiconductors, even at room temperature. In the saturation region, the currents were extremely sensitive to temperature and also increased linearly with voltage drop along the nanowire. The latter permits the estimation of the doping concentration and the carrier lifetime, which is limited by surface recombination. The conductivity could be tuned over 2 orders of magnitude by in situ hydrogen passivation/desorption cycles. This work highlights the role of dangling bonds in surface leakage currents and demonstrates the use of hydrogen passivation for optimizing the FE characteristics of Si NWs.