Atomic Layer Deposition of Osmium
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- 作者：Jani H盲m盲l盲inen ; Timo Sajavaara ; Esa Puukilainen ; Mikko Ritala ; Markku Leskel盲
- 刊名：Chemistry of Materials
- 出版年：2012
- 出版时间：January 10, 2012
- 年：2012
- 卷：24
- 期：1
- 页码：55-60
- 全文大小：372K
- 年卷期：v.24,no.1(January 10, 2012)
- ISSN：1520-5002
文摘
Growth of osmium thin films and nanoparticles by atomic layer deposition is described. The Os thin films were successfully grown between 325 and 375 掳C using osmocene and molecular oxygen as precursors. The films consisted of only Os metal as osmium oxides were not detected in X-ray diffraction measurements. Also the impurity contents of oxygen, carbon, and hydrogen were less than 1 at % each at all deposition temperatures. The long nucleation delay of the Os process facilitates either Os nanoparticle or thin film deposition. However, after the nucleation delay of about 350 cycles the film growth proceeded linearly with increasing number of deposition cycles. Also conformal growth of Os thin films on three-dimensional (3-D) structures was confirmed.