文摘
Sb-doped ZnO nanobelts with single-side zigzag boundaries were synthesized by chemical vapor deposition with an Au catalyst. Transmission electron microscopy shows the existence of two types of periodic planar defects in each nanobelt, which are located on the (0001) and (022̅1) planes, respectively. The growth of the nanobelts is suggested to be controlled by both the two planar defects. Raman scattering analysis shows that the Sb doping in ZnO depresses the Raman A1T mode of ZnO and induces the appearance of the additional peak at 761 cm−1. The near band edge emission peak in photoluminescence spectra has red-shifted as well as broadened seriously due to the heavy doping of Sb.