Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films

详细信息    查看全文

• 作者：Jack Hellerstedt ; Mark T. Edmonds ; Navneeth Ramakrishnan ; Chang Liu ; Bent Weber ; Anton Tadich ; Kane M. O’Donnell ; Shaffique Adam ; Michael S. Fuhrer
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：May 11, 2016
• 年：2016
• 卷：16
• 期：5
• 页码：3210-3214
• 全文大小：371K
• 年卷期：0
• ISSN：1530-6992

文摘

Topological Dirac semimetals (TDS) are three-dimensional analogues of graphene, with linear electronic dispersions in three dimensions. Nanoscale confinement of TDSs in thin films is a necessary step toward observing the conventional-to-topological quantum phase transition (QPT) with increasing film thickness, gated devices for electric-field control of topological states, and devices with surface-state-dominated transport phenomena. Thin films can also be interfaced with superconductors (realizing a host for Majorana Fermions) or ferromagnets (realizing Weyl Fermions or T-broken topological states). Here we report structural and electrical characterization of large-area epitaxial thin films of TDS Na₃Bi on single crystal Al₂O₃[0001] substrates. Charge carrier mobilities exceeding 6,000 cm²/(V s) and carrier densities below 1 × 10¹⁸ cm^–3 are comparable to the best single crystal values. Perpendicular magnetoresistance at low field shows the perfect weak antilocalization behavior expected for Dirac Fermions in the absence of intervalley scattering. At higher fields up to 0.5 T anomalously large quadratic magnetoresistance is observed, indicating that some aspects of the low field magnetotransport (μB < 1) in this TDS are yet to be explained.