Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire
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- 作者：Ying Yu ; Mi-Feng Li ; Ji-Fang He ; Yu-Ming He ; Yu-Jia Wei ; Yu He ; Guo-Wei Zha ; Xiang-Jun Shang ; Juan Wang ; Li-Juan Wang ; Guo-Wei Wang ; Hai-Qiao Ni ; Chao-Yang Lu ; Zhi-Chuan Niu
- 刊名：Nano Letters
- 出版年：2013
- 出版时间：April 10, 2013
- 年：2013
- 卷：13
- 期：4
- 页码：1399-1404
- 全文大小：434K
- 年卷期：v.13,no.4(April 10, 2013)
- ISSN：1530-6992
文摘
We report a new type of single InAs quantum dot (QD) embedded at the junction of gold-free branched GaAs/AlGaAs nanowire (NW) grown on silicon substrate. The photoluminescence intensity of such QD is 20 times stronger than that from randomly distributed QD grown on the facet of straight NW. Sharp excitonic emission is observed at 4.2 K with a line width of 101 渭eV and a vanishing two-photon emission probability of g2(0) = 0.031(2). This new nanostructure may open new ways for designing novel quantum optoelectronic devices.