Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

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• 作者：Junghwan Huh ; Hoyeol Yun ; Dong-Chul Kim ; A. Mazid Munshi ; Dasa L. Dheeraj ; Hanne Kauko ; Antonius T. J. van Helvoort ; SangWook Lee ; Bj酶rn-Ove Fimland ; Helge Weman
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：June 10, 2015
• 年：2015
• 卷：15
• 期：6
• 页码：3709-3715
• 全文大小：404K
• ISSN：1530-6992

文摘

Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p鈥搉 or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.