Confined States of Individual Type-II GaSb/GaAs Quantum Rings Studied by Cross-Sectional Scanning Tunneling Spectroscopy
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文摘
Combined cross-sectional scanning tunneling microscopy and spectroscopy results reveal the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and the corresponding electronic properties. Hole confinement energies between 0.2 and 0.3 eV and a type-II conduction band offset of 0.1 eV are directly obtained from the data. Additionally, the hole occupancy of quantum dot states and spatially separated Coulomb-bound electron states are observed in the tunneling spectra.

Keywords:

GaSb; quantum rings; quantum dots; type-II band offset; scanning tunneling spectroscopy

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