Crossing the Insulator-to-Metal Barrier with a Thiazyl Radical Conductor
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- 作者：Aaron Mailman ; Stephen M. Winter ; Xin Yu ; Craig M. Robertson ; Wenjun Yong ; John S. Tse ; Richard A. Secco ; Zhenxian Liu ; Paul A. Dube ; Judith A. K. Howard ; Richard T. Oakley
- 刊名：The Journal of the American Chemical Society
- 出版年：2012
- 出版时间：June 20, 2012
- 年：2012
- 卷：134
- 期：24
- 页码：9886-9889
- 全文大小：323K
- 年卷期：v.134,no.24(June 20, 2012)
- ISSN：1520-5126
文摘
The layered-sheet architecture of the crystal structure of the fluoro-substituted oxobenzene-bridged bisdithiazolyl radical FBBO affords a 2D 蟺-electronic structure with a large calculated bandwidth. The material displays high electrical conductivity for a f = 1/2 system, with 蟽(300 K) = 2 脳 10鈥? S cm鈥?. While the conductivity is thermally activated at ambient pressure, with Eact = 0.10 eV at 300 K, indicative of a Mott insulating state, Eact is eliminated at 3 GPa, suggesting the formation of a metallic state. The onset of metallization is supported by infrared measurements, which show closure of the Mott-Hubbard gap above 3 GPa.