Fully Solution-Processed Low-Voltage Aqueous In2O3 Thin-Film Transistors Using an Ultrathin ZrOx Dielectric

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• 作者：Ao Liu ; Guo Xia Liu ; Hui Hui Zhu ; Feng Xu ; Elvira Fortunato ; Rodrigo Martins ; Fu Kai Shan
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2014
• 出版时间：October 22, 2014
• 年：2014
• 卷：6
• 期：20
• 页码：17364-17369
• 全文大小：320K
• ISSN：1944-8252

文摘

We reported here 鈥渁queous-route鈥?fabrication of In₂O₃ thin-film transistors (TFTs) using an ultrathin solution-processed ZrO_x dielectric thin film. The formation and properties of In₂O₃ thin films under various annealing temperatures were intensively examined by thermogravimetric analysis, Fourier transform infrared spectroscopy, and atomic force microscopy. The solution-processed ZrO_x thin film followed by sequential UV/ozone treatment and low-temperature thermal-annealing processes showed an amorphous structure, a low leakage-current density (鈭? 脳 10^鈥? A/cm² at 2 MV/cm), and a high breakdown electric field (鈭?.2 MV/cm). On the basis of its implementation as the gate insulator, the In₂O₃ TFTs based on ZrO_x annealed at 250 掳C exhibit an on/off current ratio larger than 10⁷, a field-effect mobility of 23.6 cm²/V路s, a subthreshold swing of 90 mV/decade, a threshold voltage of 0.13 V, and high stability. These promising properties were obtained at a low operating voltage of 1.5 V. These results suggest that 鈥渁queous-route鈥?In₂O₃ TFTs based on a solution-processed ZrO_x dielectric could potentially be used for low-cost, low-temperature-processing, high-performance, and flexible devices.

Keywords:

aqueous solution process; low-temperature process; ultrathin zirconium oxide; indium oxide; thin-film transistor